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Polar TM HiPerFET TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXFB30N120P
V DSS
I D25
R DS(on)
t rr
=
=
≤
≤
1200V
30A
350 m Ω
300 ns
Fast Intrinsic Diode
PLUS264 TM
Symbol
Test Conditions
Maximum Ratings
V DSS
T J = 25 ° C to 150 ° C
1200
V
G
V DGR
V GSS
V GSM
I D25
I DM
I A
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
1200
± 30
± 40
30
75
15
V
V
V
A
A
A
D
S
G = Gate
S = Source
Tab
D = Drain
Tab = Drain
E AS
dv/dt
P D
T J
T JM
T stg
T L
T SOLD
F C
Weight
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque
2.0
15
1250
-55 ... +150
150
-55 ... +150
300
260
30..120/6.7..27
10
J
V/ns
W
° C
° C
° C
°C
°C
N/lb.
g
Features
Fast Intrinsic Diode
Avalanche Rated
Low R DS(ON) and Q G
Low Package Inductance
Advantages
Plus 264 TM Package for Clip or Spring
Mounting
High Power Density
Easy to Mount
Space Savings
Applications
High Voltage Switch-Mode and
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
Resonant-Mode Power Supplies
High Voltage Pulse Power
Applications
BV DSS
V GS = 0V, I D = 3mA
1200
V
High Voltage Discharge Circuits in
Laser Pulsers
V GS(th)
I GSS
V DS = V GS , I D = 1mA
V GS = ± 30V, V DS = 0V
3.5
6.5
± 300
V
nA
Spark Igniters, RF Generators
High Voltage DC-DC Coverters
High Voltage DC-AC Inverters
I DSS
V DS = V DSS , V GS = 0V
T J = 125 ° C
50 μ A
5.0 mA
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
350 m Ω
? 2010 IXYS CORPORATION, All Rights Reserved
DS99825B(02/10)
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